Tunable Photoluminescence via Thermally Evaporated ZnS Ultra Thin Films

Authors

  • Yoshifumi Urakawa Institute for Polymers and Chemicals, Business Development Center, Showa Denko K. K., Kawasaki, Kanagawa 210-0867 Japan
  • Karen K. Gleason Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

DOI:

https://doi.org/10.6000/2369-3355.2014.01.01.5

Keywords:

Zinc Sulfide, Thermal Evaporation, Thin Film, and Photoluminescence., Lattice Defect

Abstract

ZnS thin films have been deposited by thermal evaporation at various deposition rates. By controlling the deposition rate, the position of the maximum in the photoluminescence spectra could be easily tuned from 2.9 to 2.0 eV, which produced a corresponding change in the emission color. The optical and morphological characteristics of the ZnS thin films were measured. The photoluminescence spectra had broad peaks, suggesting a distribution of ZnS nanocrystallites dimensions. Nanocrystallites dimensions were in the range of 1 nm to 3 nm via TEM analyses. The changes in optical properties were potentially attributable to the lattice defects of ZnS crystals, including Schottky defects and the substation of sulfur atoms by oxygen atoms. The color of the resulting light emission was obtained by controlling the deposition rate of ZnS.

Author Biography

Karen K. Gleason, Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

Department of Chemical Engineering

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Published

2014-06-24

How to Cite

Urakawa, Y., & Gleason, K. K. (2014). Tunable Photoluminescence via Thermally Evaporated ZnS Ultra Thin Films. Journal of Coating Science and Technology, 1(1), 46–50. https://doi.org/10.6000/2369-3355.2014.01.01.5

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Articles