JCST

Journal of Coating Science and Technology


Table of Contents

Volume 3 No. 1, 2016

 * This issue is Open Access


Are Diamond Surface Coatings Immune to Dry Running? - Pages 1-8
Michael D. Seymour
DOI: http://dx.doi.org/10.6000/2369-3355.2016.03.01.1

Methodologies of Application of Sol-Gel Based Solution onto Substrate: A Review - Pages 9-22
Saheli Bera, G. Udayabhanu, Ramanuj Narayan and Tapan K. Rout
DOI: http://dx.doi.org/10.6000/2369-3355.2016.03.01.2

Reactive DC Magnetron Sputtering-Induced the Formation of Amorphous CuN Films Embedded Nanocrystalline WC Phase - Pages 23-28
Yue Lin and Shihong Zhang
DOI: http://dx.doi.org/10.6000/2369-3355.2016.03.01.3

Corrosion Protection of Aluminum Alloy by Sol-Gel Derived Organic-Inorganic Hybrid Pretreatments Based on Epoxy Resin Modified Silane Precursor - Pages 29-40
Mahshid Niknahad, Chintankumar J. Patel and Vijay Mannari
DOI: http://dx.doi.org/10.6000/2369-3355.2016.03.01.4

Coalescence of Water Drops in Water-ULSD Dispersions via Electrowetting - Pages 41-49
Ashish Bandekar and George G. Chase
DOI: http://dx.doi.org/10.6000/2369-3355.2016.03.01.5

Journal of Coating Science and Technology

Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition
Pages 38-45
V.S. Sedov, A.A. Khomich, V.G. Ralchenko, A.K. Martyanov, S.S. Savin, O.N. Poklonskaya and N.S. Trofimov

DOI: http://dx.doi.org/10.6000/2369-3355.2015.02.02.1

Published: 14 September 2015

 

Abstract: Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4–H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 ≈ 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 – 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way.

Keywords: Diamond film, microwave plasma CVD, aluminum nitride, doping, silane, silicon-vacancy color center, photoluminescence, Raman spectroscopy.

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Journal of Coating Science and Technology


Table of Contents

Volume 2 No. 2, 2015

 * This issue is Open Access


Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition - Pages 38-45
V.S. Sedov, A.A. Khomich, V.G. Ralchenko, A.K. Martyanov, S.S. Savin, O.N. Poklonskaya and N.S. Trofimov
DOI: http://dx.doi.org/10.6000/2369-3355.2015.02.02.1

Oriented Zinc Oxide Nanocrystalline Thin Films Grown from Sol-Gel Solution - Pages 46-50
Jyotshna Pokharel, Maheshwar Shrestha, Li Qin Zhou, Victor Neto and Qi Hua Fan
DOI: http://dx.doi.org/10.6000/2369-3355.2015.02.02.2

Effect of Surface Modification on the Absorption and Luminescence Response in tris(8-Hydroxyquinoline) Gallium Films Achieved by Thermal Treatment - Pages 51-55
Fahmi Fariq Muhammad
DOI: http://dx.doi.org/10.6000/2369-3355.2015.02.02.3

Reactive Magnetron Sputtering of ZrO2/Al2O3 Coatings: Alumina Content and Structure Stability - Pages 56-64
I. Zukerman, R.L. Boxman and A. Raveh
DOI: http://dx.doi.org/10.6000/2369-3355.2015.02.02.4

Carbon Nanotubes (CNTs) for Prolonging the Life of Micropunch - Pages 65-71
Kelvii Wei Guo and Hon Yuen Tam
DOI: http://dx.doi.org/10.6000/2369-3355.2015.02.02.5

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