Numerical Simulation of Quantum Efficiency of Cd_0.8Zn_0.2S /CIGS Solar Cells
Pages 195-198
E. Ihalane, L. Atourki, L. Alahyane, H. Kirou, L. Boulkaddat, E. El hamri, A. Ihlal and K. Bouabid

DOI: http://dx.doi.org/10.6000/1929-6002.2014.03.04.6

Published: 05 December 2014

Abstract: The paper presents a simulation study using the numerical simulator SCAPS-1D to model ZnO/Cd_0.8Zn_0.2S/CuIn_(1-y)Ga_ySe₂/CuInSe₂ structures. Effects of thickness of graded and ungraded CIGS absorbers and buffer layers on cell performance have been investigated with the aim to reach a higher efficiency. Quantum efficiency (QE) as function of wavelength and thickness of these layers was studied. The high efficiency of CIGS cells, in order of 22.05%, has reached with the absorbers thickness between 2μm and 3.5μm and with acceptor concentration of about 2.10¹⁶ cm³. Other hand, we investigate the effect of Cd_0.8Zn_0.2S ternary compound buffer on the top of the p-CIGS cell. These simulation results give some important indication to enable further development of multilayer thin-film solar cells based on CuInGaSe₂ with Cd_0.8Zn_0.2S as buffer layer instead of CdS.