JCST
Journal of Coating Science and Technology | Volume 3 Number 2
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Focused Electron Beam Induced Processing Renders at Room Temperature a Bose-Einstein Condensate in Koops-GranMat - Pages 50-55 Formate-Free Metal-Organic Decomposition Inks of Copper Particles and Self-Reductive Copper Complex for the Fabrication of Conductive Copper Films - Pages 56-61 Effect of Nitriding Time on the Structural Evolution and Properties of Austenitic Stainless Steel Nitrided Using High Power Pulsed DC Glow Discharge Ar/N2 Plasma - Pages 62-74 Microwave Plasma CVD Grown Single Crystal Diamonds – A Review - Pages 75-99 |
Journal of Coating Science and Technology | Volume 2 Number 3
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Optical Coatings as Mirrors for Optical Diagnostics - Pages 72-78 Synthesis of Cobalt Nanowires on Porous Anodic Alumina Template Using Electrochemical Deposition - Pages 79-84 Preparation of Low Friction MoSex/nc-Mo Coatings Containing Spherical Mo Nanoparticles - Pages 85-92 Effect of Post Heated TiN Coating on Pitting Corrosion of Austenitic Stainless Steel - Pages 93-99 The Formation of Carbon Microcoils Having the Coil-Type Overall Geometry - Pages 100-104 |
Journal of Coating Science and Technology | Volume 3 Number 1
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Are Diamond Surface Coatings Immune to Dry Running? - Pages 1-8 Methodologies of Application of Sol-Gel Based Solution onto Substrate: A Review - Pages 9-22 Reactive DC Magnetron Sputtering-Induced the Formation of Amorphous CuN Films Embedded Nanocrystalline WC Phase - Pages 23-28 Corrosion Protection of Aluminum Alloy by Sol-Gel Derived Organic-Inorganic Hybrid Pretreatments Based on Epoxy Resin Modified Silane Precursor - Pages 29-40 Coalescence of Water Drops in Water-ULSD Dispersions via Electrowetting - Pages 41-49 |
Abstract : Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition
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Abstract: Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4–H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 ≈ 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 – 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way. Keywords: Diamond film, microwave plasma CVD, aluminum nitride, doping, silane, silicon-vacancy color center, photoluminescence, Raman spectroscopy. |
Journal of Coating Science and Technology | Volume 2 Number 2
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Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition - Pages 38-45 Oriented Zinc Oxide Nanocrystalline Thin Films Grown from Sol-Gel Solution - Pages 46-50 Effect of Surface Modification on the Absorption and Luminescence Response in tris(8-Hydroxyquinoline) Gallium Films Achieved by Thermal Treatment - Pages 51-55 Reactive Magnetron Sputtering of ZrO2/Al2O3 Coatings: Alumina Content and Structure Stability - Pages 56-64 Carbon Nanotubes (CNTs) for Prolonging the Life of Micropunch - Pages 65-71 |